- RS Best.-Nr.:
- 178-4423
- Herst. Teile-Nr.:
- NTB082N65S3F
- Marke:
- onsemi
Zurzeit nicht verfügbar, Versand erfolgt sobald lieferbar.
Im Warenkorb
Preis pro Stück
7,91 €
(ohne MwSt.)
9,41 €
(inkl. MwSt.)
Stück | Pro Stück |
1 - 9 | 7,91 € |
10 - 99 | 6,73 € |
100 - 249 | 5,39 € |
250 - 499 | 5,07 € |
500 + | 4,78 € |
- RS Best.-Nr.:
- 178-4423
- Herst. Teile-Nr.:
- NTB082N65S3F
- Marke:
- onsemi
Mehr Infos und technische Dokumente
Rechtliche Anforderungen
- Ursprungsland:
- CN
Produktdetails
SUPERFET III MOSFET is ON Semiconductors brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Features
700 V @ TJ = 150
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
Optimized Capacitance
Excellent body diode performance (low Qrr, robust body diode)
Typ. RDS(on) = 70 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge circuit
Applications:
Telecommunication
Cloud system
Industrial
End Products:
Telecom power
Server power
Solar / UPS
EV charger
700 V @ TJ = 150
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
Optimized Capacitance
Excellent body diode performance (low Qrr, robust body diode)
Typ. RDS(on) = 70 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge circuit
Applications:
Telecommunication
Cloud system
Industrial
End Products:
Telecom power
Server power
Solar / UPS
EV charger
Technische Daten
Eigenschaft | Wert |
---|---|
Channel-Typ | N |
Dauer-Drainstrom max. | 40 A |
Drain-Source-Spannung max. | 650 V |
Gehäusegröße | D2PAK (TO-263) |
Montage-Typ | SMD |
Pinanzahl | 3 |
Drain-Source-Widerstand max. | 82 mΩ |
Channel-Modus | Enhancement |
Gate-Schwellenspannung max. | 5V |
Gate-Schwellenspannung min. | 3V |
Verlustleistung max. | 313 W |
Transistor-Konfiguration | Einfach |
Gate-Source Spannung max. | ±30 V |
Anzahl der Elemente pro Chip | 1 |
Breite | 9.65mm |
Länge | 10.67mm |
Gate-Ladung typ. @ Vgs | 81 nC @ 10 V |
Betriebstemperatur max. | +150 °C |
Höhe | 4.58mm |
Diodendurchschlagsspannung | 1.3V |
Betriebstemperatur min. | –55 °C |
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