Vishay TrenchFET N-Kanal, SMD MOSFET 20 V / 2.9 A, 4-Pin MICRO FOOT

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Verpackungsoptionen:
RS Best.-Nr.:
180-7741
Herst. Teile-Nr.:
SI8824EDB-T2-E1
Marke:
Vishay
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Marke

Vishay

Channel-Typ

N

Dauer-Drainstrom max.

2.9 A

Drain-Source-Spannung max.

20 V

Gehäusegröße

MICRO FOOT

Serie

TrenchFET

Montage-Typ

SMD

Pinanzahl

4

Drain-Source-Widerstand max.

0.075 O

Channel-Modus

Enhancement

Gate-Schwellenspannung max.

0.8V

Anzahl der Elemente pro Chip

1

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 5V. It has drain-source resistance of 75mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 900mW. The minimum and a maximum driving voltage for this transistor are 1.2V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• Space efficient
• TrenchFET power MOSFET
• Typical ESD protection 2000V (HBM)

Applications


• Load switch for 1.2V, 1.5V, and 1.8V power lines
• Load switch with low voltage drop
• Small signal and high speed switching
• Ultraportable and wearable devices

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007