- RS Best.-Nr.:
- 178-4657
- Herst. Teile-Nr.:
- FCMT250N65S3
- Marke:
- onsemi
6080 lieferbar innerhalb von 4 Werktag(en) (Mo-Fr).
Nicht als Expresslieferung erhältlich
Preis pro Stück (In einer VPE à 10)
2,958 €
(ohne MwSt.)
3,52 €
(inkl. MwSt.)
Stück | Pro Stück | Pro Packung* |
---|---|---|
10 - 90 | 2,958 € | 29,58 € |
100 - 240 | 2,878 € | 28,78 € |
250 - 490 | 2,801 € | 28,01 € |
500 - 990 | 2,731 € | 27,31 € |
1000 + | 2,662 € | 26,62 € |
*Bitte VPE beachten
- RS Best.-Nr.:
- 178-4657
- Herst. Teile-Nr.:
- FCMT250N65S3
- Marke:
- onsemi
Mehr Infos und technische Dokumente
Rechtliche Anforderungen
- Ursprungsland:
- PH
Produktdetails
SUPERFET III MOSFET is ON Semiconductors brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
700 V @ TJ = 150 oC
Leadless Ultra-thin SMD package
Kelvin contact
Ultra Low Gate Charge (Typ. Qg = 24 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)
Optimized Capacitance
Typ. RDS(on) = 210 mΩ
Moisture Sensitivity Level 1 guarantee
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
High power density
Low gate noise and switching loss
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Telecommunication
Industrial
End Products:
Telecom / Server
Adapter
LED Lighting
Leadless Ultra-thin SMD package
Kelvin contact
Ultra Low Gate Charge (Typ. Qg = 24 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)
Optimized Capacitance
Typ. RDS(on) = 210 mΩ
Moisture Sensitivity Level 1 guarantee
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
High power density
Low gate noise and switching loss
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Telecommunication
Industrial
End Products:
Telecom / Server
Adapter
LED Lighting
Technische Daten
Eigenschaft | Wert |
---|---|
Channel-Typ | N |
Dauer-Drainstrom max. | 12 A |
Drain-Source-Spannung max. | 650 V |
Gehäusegröße | Power88 |
Montage-Typ | SMD |
Pinanzahl | 4 |
Drain-Source-Widerstand max. | 250 mΩ |
Channel-Modus | Enhancement |
Gate-Schwellenspannung max. | 4.5V |
Gate-Schwellenspannung min. | 2.5V |
Verlustleistung max. | 90 W |
Transistor-Konfiguration | Einfach |
Gate-Source Spannung max. | ±30 V |
Breite | 8mm |
Anzahl der Elemente pro Chip | 1 |
Gate-Ladung typ. @ Vgs | 24 nC @ 10 V |
Betriebstemperatur max. | +150 °C |
Länge | 8mm |
Diodendurchschlagsspannung | 1.2V |
Betriebstemperatur min. | –55 °C |
Höhe | 1.05mm |
Verwandte Produkte
- onsemi FCMT250N65S3 N-Kanal, SMD MOSFET 650 V / 12 A 90 W, 4-Pin Power88
- onsemi FCMT180N65S3 N-Kanal, SMD MOSFET 650 V / 17 A 139 W, 4-Pin Power88
- STMicroelectronics MDmesh M5 STD16N65M5 N-Kanal, SMD MOSFET 650 V...
- STMicroelectronics MDmesh M5 STP16N65M5 N-Kanal, THT MOSFET 650 V...
- onsemi FCMT360N65S3 N-Kanal, SMD MOSFET 650 V / 10 A 83 W, 4-Pin PQFN4
- onsemi FCMT125N65S3 N-Kanal, SMD MOSFET 650 V / 24 A 181 W, 4-Pin PQFN4
- onsemi FCH023N65S3L4 N-Kanal, THT MOSFET 650 V / 75 A 595 W, 4-Pin TO-247-4
- IXYS X2-Class IXTN102N65X2 N-Kanal, Schraub MOSFET 650 V / 76 A...