STMicroelectronics SCTL35N65G2V SCTL35N65G2V N-Kanal, SMD MOSFET 650 V / 40 A, 5-Pin PowerFLAT 8 x 8 HV
- RS Best.-Nr.:
- 213-3941
- Herst. Teile-Nr.:
- SCTL35N65G2V
- Marke:
- STMicroelectronics
Zurzeit nicht verfügbar, Versand erfolgt sobald lieferbar.
Preis pro Stück (Auf einer Rolle von 3000)
12,508 €
(ohne MwSt.)
14,885 €
(inkl. MwSt.)
Stück | Pro Stück | Pro Rolle* |
|---|---|---|
| 3000 + | 12,508 € | 37.524,00 € |
*Bitte VPE beachten
- RS Best.-Nr.:
- 213-3941
- Herst. Teile-Nr.:
- SCTL35N65G2V
- Marke:
- STMicroelectronics
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Produktdetails
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Very fast and robust intrinsic body diode
Low capacitance
Source sensing pin for increased efficiency
Low capacitance
Source sensing pin for increased efficiency
Technische Daten
Eigenschaft | Wert |
|---|---|
| Channel-Typ | N |
| Dauer-Drainstrom max. | 40 A |
| Drain-Source-Spannung max. | 650 V |
| Gehäusegröße | PowerFLAT 8 x 8 HV |
| Serie | SCTL35N65G2V |
| Montage-Typ | SMD |
| Pinanzahl | 5 |
| Drain-Source-Widerstand max. | 0.067 O |
| Channel-Modus | Enhancement |
| Gate-Schwellenspannung max. | 5V |
| Anzahl der Elemente pro Chip | 1 |
| Transistor-Werkstoff | SiC |
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