Vishay TrenchFET SQ2337ES-T1_GE3 P-Kanal, SMD MOSFET 80 V / 2.2 A, 3-Pin TO-236

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 290mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 3W and continuous drain current of 2.2A. The minimum and a maximum driving voltage for this MOSFET is 6V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET

• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested