STMicroelectronics HB Series STGSH80HB65DAG P-Kanal Dual, SMD MOSFET 650 V / 83 A, 9-Pin ACEPACK SMIT

The STMicroelectronics device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included in every switch.

AQG 324 qualified
High-speed switching series
Minimized tail current
Tight parameter distribution
Low thermal resistance thanks to DBC substrate