onsemi FCP165N65S3 N-Kanal, THT MOSFET 650 V / 19 A 154 W, 3-Pin TO-220
- RS Best.-Nr.:
- 178-4243
- Herst. Teile-Nr.:
- FCP165N65S3
- Marke:
- onsemi
1 lieferbar innerhalb von 4 Werktag(en) (Mo-Fr).
Nicht als Expresslieferung erhältlich
Preis pro Stück (In einer Stange von 50)
1,581 €
(ohne MwSt.)
1,881 €
(inkl. MwSt.)
Stück | Pro Stück | Pro Stange* |
|---|---|---|
| 50 + | 1,581 € | 79,05 € |
*Bitte VPE beachten
- RS Best.-Nr.:
- 178-4243
- Herst. Teile-Nr.:
- FCP165N65S3
- Marke:
- onsemi
Mehr Infos und technische Dokumente
Rechtliche Anforderungen
- Ursprungsland:
- CN
Produktdetails
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 39 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)
Internal Gate Resistance: 4.6 Ω
Optimized Capacitance
Typ. RDS(on) = 140 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consumer
Industrial
End Products:
Notebook / Desktop computer
Game Console
Telecom / Server
LCD / LED TV
LED Lighting / Ballast
Adapter
Ultra Low Gate Charge (Typ. Qg = 39 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)
Internal Gate Resistance: 4.6 Ω
Optimized Capacitance
Typ. RDS(on) = 140 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consumer
Industrial
End Products:
Notebook / Desktop computer
Game Console
Telecom / Server
LCD / LED TV
LED Lighting / Ballast
Adapter
Technische Daten
Eigenschaft | Wert |
|---|---|
| Channel-Typ | N |
| Dauer-Drainstrom max. | 19 A |
| Drain-Source-Spannung max. | 650 V |
| Gehäusegröße | TO-220 |
| Montage-Typ | THT |
| Pinanzahl | 3 |
| Drain-Source-Widerstand max. | 165 mΩ |
| Channel-Modus | Enhancement |
| Gate-Schwellenspannung max. | 4.5V |
| Gate-Schwellenspannung min. | 2.5V |
| Verlustleistung max. | 154 W |
| Transistor-Konfiguration | Einfach |
| Gate-Source Spannung max. | ±30 V |
| Anzahl der Elemente pro Chip | 1 |
| Gate-Ladung typ. @ Vgs | 39 nC @ 10 V |
| Länge | 10.67mm |
| Betriebstemperatur max. | +150 °C |
| Breite | 4.7mm |
| Höhe | 16.3mm |
| Diodendurchschlagsspannung | 1.2V |
| Betriebstemperatur min. | –55 °C |
Verwandte Produkte
- onsemi FCP165N65S3 N-Kanal, THT MOSFET 650 V / 19 A 154 W, 3-Pin TO-220
- onsemi NTP165N65S NTP165N65S3H N-Kanal, THT MOSFET 650 V / 19 A,...
- onsemi SUPERFET III NTPF165N65S3H N-Kanal, THT MOSFET 650 V / 19...
- Infineon CoolMOS™ IPP60R120C7XKSA1 N-Kanal, THT MOSFET 650 V / 19...
- onsemi NTP095N65S3HF N-Kanal, THT MOSFET 650 V / 36 A 272 W, 3-Pin TO-220
- onsemi FCP125N65S3R0 N-Kanal, THT MOSFET 650 V / 24 A 181 W, 3-Pin TO-220
- onsemi NTP125N NTP125N65S3H N-Kanal, THT MOSFET 650 V / 24 A, 3-Pin TO-220
- onsemi SUPERFET III NTPF360N65S3H N-Kanal, THT MOSFET 650 V / 10...