Vishay TrenchFET SI4425DDY-T1-GE3 P-Kanal, SMD MOSFET 30 V / 19,7 A, 8-Pin SO-8

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 9.8mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 5.7W and continuous drain current of 19.7A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

• Desktop PCs
• Load switches
• Notebook PCs

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested