Vishay TrenchFET SI4825DDY-T1-GE3 P-Kanal, SMD MOSFET 30 V / 14,9 A, 8-Pin SO-8

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 25V. It has drain-source resistance of 12.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 5W and continuous drain current of 14.9A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

• Load Switch
• Notebook Adaptor Switch

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested