Vishay SI7956DP-T1-GE3 MOSFET

The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 105mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3.5W and continuous drain current of 4.1A. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Dual MOSFET for space savings
• Halogen free
• Lead (Pb) free component
• Low on-resistance in new low thermal resistance PowerPAK package
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

• Half bridge and forward converters
• High efficiency primary side switches

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested