Diskrete Halbleiter
Kategorie
Preis (Netto) | Beschreibung | Produkt-Details |
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Toshiba TK TK9J90E N-Kanal, THT MOSFET 900 V / 9 A 250 W, 3-Pin TO-3PN
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Toshiba TK TK9J90E N-Kanal, THT MOSFET 900 V / 9 A 250 W, 3-Pin TO-3PN
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Toshiba 2SK 2SK3878(F) N-Kanal, THT MOSFET 900 V / 9 A 150 W, 3-Pin TO-3PN
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Toshiba TK TK12P60W,RVQ(S N-Kanal, SMD MOSFET 600 V / 11,5 A 100 W, 3-Pin DPAK (TO-252)
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Toshiba SMD Schottky Diode, 5V / 30mA, 2-Pin SOD-323
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Toshiba TK TK12P60W,RVQ(S N-Kanal, SMD MOSFET 600 V / 11,5 A 100 W, 3-Pin DPAK (TO-252)
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Toshiba 2SA1987-O(Q) THT, PNP Transistor –230 V / –15 A 30 MHz, TO-3PL 3-Pin
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Toshiba SMD Hohe Geschwindigkeit Diode Gemeinsame Anode, 85V / 300mA, 3-Pin SOT-346 (SC-59)
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Toshiba 2SC5200N(S1,E,S) THT, NPN Transistor 230 V / 15 A, TO-3P 3-Pin
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Toshiba TK TK35E08N1 N-Kanal, THT MOSFET 80 V / 55 A 72 W, 3-Pin TO-220
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Toshiba TK TK20N60W,S1VF(S N-Kanal, THT MOSFET 600 V / 20 A 165 W, 3-Pin TO-247
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Toshiba TK TK30A06N1,S4X(S N-Kanal, THT MOSFET 60 V / 43 A 25 W, 3-Pin TO-220SIS
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Toshiba 2SA1986-O(Q) THT, PNP Transistor –230 V / –15 A 30 MHz, TO-3PN 3-Pin
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Toshiba N-Kanal JFET 2SK208-R(TE85L,F), 10 V Single, SOT-346 (SC-59) 3-Pin Einfach
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Toshiba TK TK35E08N1 N-Kanal, THT MOSFET 80 V / 55 A 72 W, 3-Pin TO-220
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Toshiba IGBT / 30 A ±20V max., 600 V 170 W, 3-Pin TO-3P N-Kanal
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Toshiba TK TK30A06N1,S4X(S N-Kanal, THT MOSFET 60 V / 30 A 25 W, 3-Pin TO-220SIS
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Toshiba TK TK20N60W,S1VF(S N-Kanal, THT MOSFET 600 V / 20 A 165 W, 3-Pin TO-247
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Toshiba TK TK30A06N1,S4X(S N-Kanal, THT MOSFET 60 V / 30 A 25 W, 3-Pin TO-220SIS
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Toshiba 2SK 2SK4017(Q) N-Kanal, THT MOSFET 60 V / 5 A 20 W, 3-Pin PW Form2
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